document number: 81954 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.0, 02-dec-08 1 optocoupler, photodarlington output, low input current, high gain, with base connection vo221at, vo222at, vo223at vishay semiconductors description the vo221at, vo222at, vo223at are high current transfer ratio (ctr) optocouplers with a gallium arsenide infrared led emitter and a silicon npn photodarlington transistor detector. the device has a ctr tested at 1 ma led current. this low drive current permits easy interfacing from cmos to lsttl or ttl. features ? isolation test voltage, 4000 v rms ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ? ul1577, file no. e52744 system code y ? cul - file no. e52744, equivalent to csa bulletin 5a ? din en 60747-5-5 (vde 0884) available with option 1 note t amb = 25 c, unless otherwise specified. stresses in excess of the absolute maximu m ratings can cause permanent damage to the device. functional operation of the device is not implied at these or any other c onditions in excess of t hose given in the operational sections of this document. exposure to absolute ma ximum ratings for extended periods of the time can adversely affect reliability. i179022 a c n c n c n c b c e 1 2 3 4 8 7 6 5 order information part remarks vo221at ctr > 100 %, soic-8 vo222at ctr > 200 %, soic-8 vo223at ctr > 500 %, soic-8 absolute maximum ratings parameter test condition symbol value unit input peak reverse voltage v r 6v peak forward current 1 s, 300 pps i fm 1a forward continuous current i f 60 ma power dissipation p diss 90 mw derate linearly from 25 c 1.2 mw/c output collector emitter breakdown voltage bv ceo 30 v emitter collector breakdown voltage bv eco 5v collector base breakdown voltage bv cbo 70 v i cmax. dc i cmax. dc 50 ma i cmax. t < 1 ms i cmax. 100 ma power dissipation p diss 150 mw coupler derate linearly from 25 c 2mw/c isolation test voltage t = 1 s v iso 4000 v rms total package dissipation (at 25 c ambient) (led and detector) p tot 240 mw derate linearly from 25 c 3.2 mw/c storage temperature t stg - 40 to + 150 c operating temperature t amb - 40 to + 100 c soldering time at 260 c t sld 10 s
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 81954 2 rev. 1.0, 02-dec-08 vo221at, vo222at, vo223at vishay semiconductors optocoupler, phot odarlington output, low input current, high gain, with base connection note t amb = 25 c, unless otherwise specified. minimum and maximum values are tested requier ements. typical values are characteristic s of the device and are the result of eng ineering evaluations. typical values are for information only and are not part of the testing requirements. fig. 1 - switching test circuit electrical characteristcs parameter test condition symbol min. typ. max. unit input forward voltage i f = 1 ma v f 11.5v reverse current v r = 6 v i r 0.1 100 a capacitance v r = 0 v, f = 1 mhz c o 25 pf output collector emitter breakdown voltage i c = 100 a bv ceo 30 v emitter collector breakdown voltage i c = 10 a bv eco 5v collector base breakdown voltage i c = 10 a bv cbo 70 v collector emitter leackage current v ce = 20 v i ceo 40 na collector base current i cbo 1na emitter base current i ebo 1na collector emitter capacitance v ce = 10 v c ce 3.4 pf saturation voltage, collector emitter i ce = 0.5 ma v cesat 1v coupler capacitance (input to output) c io 0.5 pf current transfer ratio parameter test condition part symbol min. typ. max. unit current transfer ratio i f = 1 ma, v ce = 5 v vo221at ctr dc 100 % vo222at ctr dc 200 % vo223at ctr dc 500 % switching characteristics parameter test condition symbol min. typ. max. unit turn-on time v cc = 10 v, r l = 100 , i f = 5 ma t on 3s turn-off time v cc = 10 v, r l = 100 , i f = 5 ma t off 3s iild223t_09 i f t rise v o t fall t on t off 10 % 90 % 50 % v o r l v cc = 10 v i f = 5 ma f = 10 khz, df = 50 %
document number: 81954 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.0, 02-dec-08 3 vo221at, vo222at, vo223at optocoupler, photo darlington output, low input current, high gain, with base connection vishay semiconductors note as per iec 60747-5-2, 7.4.3.8.1, this op tocoupler is suitable for ?saf e electrical insulation? onl y within the safety ratings . compliance with the safety ratings shall be ensured by means of protective circuits. typical characteristics t amb = 25 c, unless otherwise specified fig. 2 - forward voltage vs. forward current fi g. 3 - peak led current vs. duty factor, safety and insulation ratings parameter test condition symbol min. typ. max. unit climatic classification (according to iec 68 part 1) 40/100/21 polution degree 2 comparative tracking index cti 175 399 isolation test voltage 1 s v iso 4000 v rms peak transient overvoltage v iotm 6000 v peak insulation voltage v iorm 560 v resistance (input to output) r io 100 g safety rating - power output p so 350 mw safety rating - input current i si 150 ma safety rating - temperature t si 165 c external creepage distance 4 mm external clearance distance 4 mm internal creepage distance 3.3 mm insulation thickness 0.2 mm iil221at_01 100 10 1 0.1 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 i f - for w ard c u rrent (ma) v f - for w ard v oltage ( v ) t a = - 55 c t a = 100 c t a = 25 c iil221at_02 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 000 1000 100 10 t- led p u lse d u ration (s) i f (pk)- peak led c u rrent (ma) 0.005 0.05 0.02 0.01 0.1 0.2 t df = /t d u ty factor 0.5
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 81954 4 rev. 1.0, 02-dec-08 vo221at, vo222at, vo223at vishay semiconductors optocoupler, phot odarlington output, low input current, high gain, with base connection fig. 4 - normalized ctr cb vs. i f fig. 5 - normalized ctr ce vs. led current fig. 6 - ctr cb vs. led current fig. 7 - ctr vs. led current fig. 8 - collector current vs. led current fig. 9 - photocurrent vs. led current iil221at_03 0.1 10 100 3 2 1 0 i f - led c u rrent (ma) n ormalized ctr c b n ormalized to: i f = 1 ma, t a = 25 c v cb = 10 v t a = - 20 c t a = 25 c t a = 50 c t a = 70 c 0 iil221at_04 i f - led c u rrent (ma) n ormalized ctr ce 0.1 1 10 100 1 10 100 1000 n ormalized to: i f = 1 ma, v ce = 5 v t a = 25 c t a = - 20 c t a = 25 c t a = 50 c t a = 70 c iil221at_05 10 100 0.00 0.05 0.10 i f - led c u rrent (ma) t a = - 20 c t a = 25 c t a = 50 c t a = 70 c i f /i cb - ctr c b ( % ) 0.1 1 iil221at_06 0.1 1 10 100 0 500 1000 1500 2000 i f - led c u rrent (ma) v ce = 10 v t a = - 20 c t a = 25 c t a = 50 c t a = 70 c ctr ce - c u rrent transfer ratio ( % ) iil221at_07 t a = - 20 c t a = 25 c t a = 50 c t a = 70 c 10 100 1 10 100 1000 i f - led c u rrent (ma) i ce - collector c u rrent (ma) v ce = 10 v 0.1 1 iil221at_0 8 0.1 0.1 1 10 100 i f - led c u rrent (ma) i cb - photoc u rrent ( a) i cb = - 20 c i cb = 25 c i cb = 50 c i cb = 70 c
document number: 81954 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.0, 02-dec-08 5 vo221at, vo222at, vo223at optocoupler, photo darlington output, low input current, high gain, with base connection vishay semiconductors fig. 10 - normalized i cb vs. i f package dimensions in inches (millimeters) iil221at_09 10 100 0.1 1 10 100 1000 i f - led c u rrent (ma) n ormalized i cb t a = - 20 c t a = 20 c t a = 50 c t a = 70 c i f = 1 ma, t a = 25 c v cb = 10 v 0.1 1 n ormalized to: i17 8 003 40 7 pin one id 5 max. iso method a 0.036 (0.91) 0.014 (0.36) 0.170 (4.32) 0.045 (1.14) 0.260 (6.6) r 0.010 (0.13) 0.050 (1.27) 0.240 (6.10) 0.050 (1.27) typ. 0.016 (0.41) 0.004 (0.10) 0.00 8 (0.20) lead coplanarity 0.0015 (0.04) max. 0.00 8 (0.20) 0.120 0.005 (3.05 0.13) c l r 0.010 (0.25) max. 0.021 (0.53) 0.154 0.005 (3.91 0.13) 0.015 0.002 (0.3 8 0.05) 0.192 0.005 (4. 88 0.13) 0.020 0.004 (0.51 0.10) 2 places 0.05 8 0.005 (1.49 0.13) 0.125 0.005 (3.1 8 0.13)
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 81954 6 rev. 1.0, 02-dec-08 vo221at, vo222at, vo223at vishay semiconductors optocoupler, phot odarlington output, low input current, high gain, with base connection ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national an d international stat utory requirements. 2. regularly and continuously improve the performance of ou r products, processes, distri bution and operating systems with respect to their impact on the health and safety of our employ ees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosp here which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london am endments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international in itiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of c ontinuous improvements to eliminat e the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air ac t amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applicat ions. all operating parameters must be validat ed for each customer application by the customer. should the buyer use vishay semi conductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damag es, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associat ed with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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